mar. 2003 applications pdp, mosfet and igbt module inverter driver for ac- servomotor and general purpose. features ? floating supply voltage ................................... 600v ? output current ............................................. +150ma ?25ma ? high side driver ? sop-8 description M81705FP is high voltage power mosfet and igbt mod- ule driver for half bridge applications. block diagram pin configuration (top view) outline 8p2s nc:no internal connection mitsubishi semiconductors M81705FP high voltage high side driver v cc v b out v s in uv detect filter q r s r inter lock pulse gen hv level shift gnd v reg 3 2 4 5 6 7 1 2 3 4 5 6 7 8 nc v cc in gnd nc v b out v s
mar. 2003 v v v v v v v/ns w mw/ c c/w c c c v v v v v v s +13.5 5 13.5 13.5 0 v s +20 500 20 20 5 absolute maximum ratings high side floating supply absolute voltage high side floating supply offset voltage high side floating supply voltage low side fixed supply voltage logic input voltage symbol unit parameter test conditions limits min. typ. max. v b > 13.5v v bs = v b -v s v b v s v bs v cc vin 0.5 ~ 624 v b 24 ~ v b +0.5 0.5 ~ 24 v s 0.5 ~ v b +0.5 0.5 ~ 24 0.5 ~ 5.5 50 0.60 6.0 50 20 ~ 125 20 ~ 100 40 ~ 125 v bs = v b -v s ta = 25 c, on board ta > 25 c, on board high side floating supply absolute voltage high side floating supply offset voltage high side floating supply voltage high side output voltage low side fixed supply voltage logic input voltage allowable offset supply voltage transient package power dissipation linear derating factor junction-case thermal resistance junction temperature operation temperature storage temperature v b v s v bs v out v cc v in dv s /dt p d k q rth(j-c) tj topr tstg symbol parameter conditions ratings unit recommended operating conditions mitsubishi semiconductors M81705FP high voltage high side driver 0.0 0.2 0.4 0.6 0.8 0 25 50 75 100 125 package power dissipation p d [w ] temperature [ c] thermal derating factor characteristic
mar. 2003 mitsubishi semiconductors M81705FP high voltage high side driver a ma ma v v v v a a v v s ma ma ma ? ? ? ns ns ns ns v 0.25 0.50 14.9 2.5 0.8 50 200 10.5 0.2 100 100 1.5 0.50 0.75 3.0 1.5 20 100 11.5 0.5 5 125 40 150 120 50 100 220 110 2.5 1.0 0.75 1.00 0.1 4.0 2.0 12.5 0.8 160 60 130 500 500 4.0 floating supply leakage current v bs standby current v cc standby current high level output voltage low level output voltage high level input threshold voltage low level input threshold voltage high level input bias current low level input bias current v bs supply uv reset voltage v bs supply uv hysteresis voltage v bs supply uv filter time output high level short circuit pulsed current output low level short circuit pulsed current output low level short circuit pulsed current output high level on resistance output low level on resistance1 output low level on resistance2 high side turn-on propagation delay high side turn-off propagation delay high side turn-on rise time high side turn-off fall time r ol1 /r ol2 switching output voltage symbol unit parameter test conditions limits min. typ.* max. v b =v s =600v i o =0a i o =0a v in =5v v in =0v v o =0v, v in =0v, pw<10 s v o =1v, v in =5v, pw<10 s v o =15v, v in =5v, pw<10 s i o = 100ma, r oh =(v oh -v o )/i o v o =1v, r ol1 =v o /i o v o =5v, r ol2 =v o /i o cl=1000pf between out v s cl=1000pf between out v s cl=1000pf between out v s cl=1000pf between out v s i fs i bs i cc v oh v ol v ih v il i ih i il v bsuvr v bsuvh t vbsuv i oh i ol1 i ol2 r oh r ol1 r ol2 t dlh t dhl t r t f v oth electrical characteristics (ta=25 c, v cc =v bs (=v b ? s )=15v, unless otherwise specified) * typ. is not specified.
mar. 2003 mitsubishi semiconductors M81705FP high voltage high side driver out in v bs v bsuvt v bsuvr t vbsuv v bsuvh 2.v bs supply under voltage lockout timing diagram when v bs supply voltage keeps lower uv trip voltage (v bsuvt = v bsuvr v bsuvh ) for v bs supply uv filter time, output signal becomes l . and then, v bs supply voltage is higher uv reset voltage, output signal keeps l until next input signal is l . 4.r ol1 /r ol2 switching output voltage v oth out in v oth as shown by the solid line of the timing chart, the output on-resistance drops at v oth level when the output is in the l state (output level falls). below the v oth level, the output level falls more steeply. timing diagram 1.input/output timing diagram when input signal is l , then output signal h . 3.allowable supply voltage transient firstly, supply v cc with voltage. secondly, supply v bs with voltage. in the case of shutting off supply voltage, shut off v bs supply voltage firstly. secondly, shut off v cc supply voltage. in case v bs or v cc is started too fast, output signal may be h .
mar. 2003 performance curves mitsubishi semiconductors M81705FP high voltage high side driver i cc vs. voltage v cc (v) i cc (ma) 12 0.0 0.2 0.4 0.8 0.6 1.0 15 18 21 24 i bs vs. voltage v bs (v) 12 0.0 0.2 0.4 0.6 0.8 1.0 15 18 21 24 i bs (ma) v ih vs. voltage v cc (v) v ih (v) 12 2.0 2.5 3.0 3.5 4.0 15 18 21 24 v il vs. voltage v cc (v) v il (v) 12 0.5 1.0 1.5 2.0 2.5 15 18 21 24 t dlh vs. voltage v cc (v) t dlh (ns) 12 200 220 240 280 260 300 15 18 21 24 t dhl vs. voltage v cc (v) t dhl (ns) 12 160 180 200 240 220 260 15 18 21 24
mar. 2003 mitsubishi semiconductors M81705FP high voltage high side driver v oh vs. voltage v bs (v) v oh (v) 12 0 5 10 20 15 25 15 18 21 24 v ol vs. voltage v bs (v) 12 0 2 6 10 8 16 4 12 14 15 18 21 24 v ol (v) i cc vs. temperature ta ( c) i cc (ma) 20 0.0 0.4 0.8 1.2 0.2 0.6 1.0 1.4 020 60 40 80 100 i bs vs. temperature ta ( c) i bs (ma) 20 0.0 0.2 0.4 0.6 0.1 0.3 0.5 0.7 020 60 40 80 100 i fs vs. temperature ta ( c) i fs ( a) 20 0 10 20 40 30 50 20 60 0 40 80 100 i o = 0ma i o = 150ma i o = 0ma i o = 20ma i o = 20ma i o = 75ma v b = v s = 600v v bsuvr vs. temperature ta ( c) v bsuvr (v) 20 10.0 10.5 11.0 12.0 11.5 12.5 20 60 04080100
mar. 2003 mitsubishi semiconductors M81705FP high voltage high side driver v ih vs. temperature ta ( c) v ih (v) 20 2.0 2.5 3.0 3.5 4.0 20 60 0 40 80 100 v il vs. temperature ta ( c) v il (v) 20 0.5 1.0 1.5 2.0 2.5 20 60 0 40 80 100 t dlh vs. temperature ta ( c) t dlh (ns) 20 150 250 300 200 350 400 020 60 40 80 100 t dhl vs. temperature ta ( c) t dhl (ns) 20 150 250 300 200 350 400 020 60 40 80 100 v oh vs. temperature ta ( c) v oh (v) 20 0 4 12 8 16 04080 20 60 100 v ol vs. temperature ta ( c) v ol (v) i o = 0ma i o = 20ma i o = 75ma 20 0 4 12 8 16 04080 20 60 100 i o = 150ma i o = 20ma i o = 0ma
mar. 2003 mitsubishi semiconductors M81705FP high voltage high side driver package outline v ol (v) i ol (ma) 0 0 50 100 150 200 6 3 9 12 15 i ol vs v ol (r ol1 /r ol2 switching output voltage) v oth sop8-p-225-1.27 weight(g) jedec code 0.07 eiaj package code lead material cu alloy 8p2s-a plastic 8pin 225mil sop symbol min nom max a a 2 b c d e h e l l 1 y b 2 dimension in millimeters a 1 i 2 0.05 1.5 0.35 0.4 0.5 0.13 0.15 0.2 4.8 5.0 5.2 4.2 4.4 4.6 1.27 5.9 6.2 6.5 0.2 0.4 0.6 0.9 0.1 0 10 0.76 5.72 1.27 1.9 e e 1 8 5 4 1 h e e d e y f a a 2 a 1 l 1 l c detail f e b 2 e 1 i 2 recommended mount pad z z 1 detail g x z 1 0.595 0.745 0.25 z b x m g
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